| 型號 | 廠商 | 描述 |
| k4f640811b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| k4f660811b 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| k4f640812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| k4f660812d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612c-tl50 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612c-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612c-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f661612c-l 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f661612c-tc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | RES, FXD, MF, CHIP, 21.5K, 1%, 1/16W, 0603 |
| k4f661612c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f641612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f641612d-ti 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f641612d-tp 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f661612d 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f661612d-ti 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f661612d-tp 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE |
| k4f641612e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4f661612e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
| k4h1g0838a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-323 3K/REEL |
| k4h641638a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 6.2Vz 0.05mA-Izt 0.05 1uA-Ir 5 SOD-523 3K/REEL |
| k4h281638a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 6.8Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.1 SOD-123 3K/REEL |
| k4h1g1638a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-123 3K/REEL |
| k4h643238a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-323 3K/REEL |
| k4h283238a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 7.5Vz 0.05mA-Izt 0.05 0.1uA-Ir 5.7 SOD-523 3K/REEL |
| k4h563238a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 8.2Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.2 SOD-123 3K/REEL |
| k4h513238a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 200mW 8.2Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.2 SOD-323 3K/REEL |
| k4h1g3238a-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 150mW 8.2Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.2 SOD-523 3K/REEL |
| k4h640438a-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER SINGLE 500mW 9.1Vz 0.05mA-Izt 0.05 0.1uA-Ir 6.9 SOD-123 3K/REEL |
| k4h640438m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 4.3Vz 5mA-Izt 0.0698 0.1uA-Ir SOT-23 3K/REEL |
| k4h1g0438m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 5.1Vz 5mA-Izt 0.0588 0.1uA-Ir 0.8 SOT-23 3K/REEL |
| k4h640838m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h280838m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 5.6Vz 5mA-Izt 0.0714 0.1uA-Ir 1 SOT-23 3K/REEL |
| k4h1g0838m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h641638m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 6.8Vz 5mA-Izt 0.0588 0.1uA-Ir 3 SOT-23 3K/REEL |
| k4h281638m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 7.5Vz 5mA-Izt 0.0604 0.1uA-Ir 5 SOT-23 3K/REEL |
| k4h1g1638m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h643238m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | DIODE ZENER DUAL COMMON-CATHODE 300mW 9.1Vz 5mA-Izt 0.0608 0.1uA-Ir 7 SOT-23 3K/REEL |
| k4h283238m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h563238m-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h640438a-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |
| k4h640438a-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.2"; External Width:3.1"; External Depth:3.7"; Enclosure Color:Gray |
| k4h640438a-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:2.2"; Enclosure Color:Gray |
| k4h640438a-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:4.7"; External Width:3.1"; External Depth:3.3"; Enclosure Color:Gray |
| k4h640438b-tca0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:6.2"; External Width:3.1"; External Depth:2.1"; Enclosure Color:Gray; Cover Color:Gray RoHS Compliant: Yes |
| k4h640438b-tca2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Euronord Enclosure; NEMA Type:1, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:6.2"; External Width:3.1"; External Depth:3.3"; Enclosure Color:Gray |
| k4h640438b-tcb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MNX Series Enclosure; NEMA Type:1, 4, 4X, 6; Enclosure Material:Polycarbonate; External Height:1.4"; External Width:3.1"; External Depth:5.1"; Enclosure Color:Light Gray |
| k4h640438b-tla0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MNX Series Enclosure; NEMA Type:1, 4, 4X, 6; Enclosure Material:Polycarbonate; External Height:1.4"; External Width:3.1"; External Depth:5.1"; Enclosure Color:Light Gray |
| k4h640438b-tla2 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | MNX Series Enclosure; NEMA Type:1, 4, 4X, 6; Enclosure Material:Polycarbonate; External Height:2"; External Width:3.1"; External Depth:5.1"; Enclosure Color:Light Gray |
| k4h640438b-tlb0 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 128Mb DDR SDRAM |