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參數(shù)資料
| 型號： | K4D553238F-GC36 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 256Mbit GDDR SDRAM |
| 中文描述： | 片256Mbit GDDR SDRAM內(nèi)存 |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 309K |
| 代理商： | K4D553238F-GC36 |
256M GDDR SDRAM
K4D553238F-GC
- 15 -
Rev 1.3 (Mar. 2005)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
2. The number of clock of tRP is restricted by the number of clock of tRAS and tRP
3. The number of clock of tWR_A is fixed. It can’t be changed by tCK
4. tRCDWR is equal to tRCDRD-2tCK and the number of clock can not be lower than 2tCK.
5. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then
rounding off to the next higher integer unconditionally.
Parameter
Symbol
-2A
-33
-36
Unit
Note
Min
42.9
48.6
28.6
13.2
6.6
13.2
9.9
Max
-
-
100K
-
-
-
-
Min
42.9
49.5
29.7
13.2
6.6
13.2
9.9
Max
-
-
100K
-
-
-
-
Min
46.8
54
32.4
14.4
7.2
14.4
10.8
Max
-
-
100K
-
-
-
-
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
tRC
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
ns
ns
ns
ns
ns
ns
ns
2,5
5
5
5
4
5
5
tWR
14.3
-
16.5
-
18
-
ns
5
Last data in to Row precharge
@Auto Precharge
Auto precharge write recovery +
Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Exit self refresh to read command
tWR_A
5
-
5
-
5
-
tCK
3
tDAL
10
-
9
-
9
-
tCK
3,5
tCDLR
tCCD
tMRD
tXSR
2
1
2
-
-
-
-
2
1
2
-
-
-
-
2
1
2
-
-
-
-
tCK
tCK
tCK
tCK
1
200
3tCK+
tIS
7.8
200
3tCK+
tIS
7.8
200
3tCK+
tIS
7.8
Power down exit time
tPDEX
-
-
-
ns
Refresh interval time
tREF
-
-
-
us
AC CHARACTERISTICS (II)
K4D553238F-GC2A
Frequency
350MHz ( 2.86ns )
300MHz ( 3.3ns )
275MHz ( 3.6ns )
Cas Latency
4
4
4
tRC
15
13
13
tRFC
17
15
15
tRAS
10
9
9
tRCDRD
5
4
4
tRCDWR
3
2
2
tRP
5
4
4
tRRD
4
3
3
tDAL
10
9
9
Unit
tCK
tCK
tCK
K4D553238F-GC33
Frequency
300MHz ( 3.3ns )
275MHz ( 3.6ns )
Cas Latency
4
4
tRC
13
13
tRFC
15
15
tRAS
9
9
tRCDRD
4
4
tRCDWR
2
2
tRP
4
4
tRRD
3
3
tDAL
9
9
Unit
tCK
tCK
K4D553238F-GC36
Frequency
275MHz ( 3.6ns )
Cas Latency
4
tRC
13
tRFC
15
tRAS
9
tRCDRD
4
tRCDWR
2
tRP
4
tRRD
3
tDAL
9
Unit
tCK
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| K4D553238F | 256Mbit GDDR SDRAM |
| K4D553238F-GC | 256Mbit GDDR SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4D553238F-JC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC2A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC33 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC36 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
| K4D553238F-JC40 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:256Mbit GDDR SDRAM |
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