| 型號(hào) | 廠商 | 描述 |
| mtd1n80e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| mtd20n06hd 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| mtd20n06hdl 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| mtd20p03 2 3 4 5 6 7 8 9 10 11 12 |
Motorola, Inc. | TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| mtd20n06 2 3 4 5 6 7 8 9 10 11 12 |
Motorola, Inc. | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| mtd20p06 2 3 4 5 6 7 8 9 10 11 12 |
Motorola, Inc. | TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| mtd20p03hdl 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| mtd20p06hdl 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| mtd20n06v 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| mtd2955e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| mtd2n20 2 3 4 5 6 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| mtd3055e1 2 3 4 5 6 |
Motorola, Inc. | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount |
| mtd3055e 2 3 4 5 6 |
MOTOROLA INC | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount |
| mtd4p05 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR |
| mtd4p06 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR |
| mtd5n05 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistors |
| mtd5n05-1 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistors |
| mtd5n06 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistors |
| mtd5n06-1 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistors |
| mtd5n25e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM |
| mtd5p06e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM |
| mtd5p06v 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
| mtd6n10e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
| mtd6n10 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
| mtd6n15 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
| mtd6n15t4 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Power Field Effect Transistor DPAK for Surface Mount |
| mtd6n15-1 2 3 4 5 6 7 8 9 10 |
ON SEMICONDUCTOR | Power Field Effect Transistor DPAK for Surface Mount |
| mtd8n06e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| mtd9n10e 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| mtdf1n02hd 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| mtdf1n03hd 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| mtdf1p02hd 2 3 4 5 6 7 8 9 10 11 12 |
MOTOROLA INC | DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| mte50n45 2 3 4 5 6 7 |
Motorola, Inc. | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS |
| mte50n50 2 3 4 5 6 7 |
Motorola, Inc. | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS |
| mte60n35 2 3 4 5 6 7 |
Motorola, Inc. | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS |
| mte60n40 2 3 4 5 6 7 |
Motorola, Inc. | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS |
| mth15n35 2 3 4 5 |
MOTOROLA INC | N-Channel Enhancement Mode silicon Gate TMOS |
| mth15n40 2 3 4 5 |
MOTOROLA INC | N-Channel Enhancement Mode silicon Gate TMOS |
| mth8n35 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| mth8n40 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |
| mth8n50e 2 3 4 5 6 |
Motorola, Inc. | TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate |
| mth8n90 2 3 4 5 6 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS |
| mtm15n45 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR |
| mtm15n20 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR |
| mtm15n50 2 3 4 5 |
MOTOROLA INC | POWER FIELD EFFECT TRANSISTOR |
| mtm45n05e 2 3 4 5 6 |
MOTOROLA INC | TMOS IV POWER FIELD EFFECT TRANSISTORS |
| mtp45n05e 2 3 4 5 6 |
MOTOROLA INC | TMOS IV POWER FIELD EFFECT TRANSISTORS |
| mtm50n05 2 3 4 5 6 |
Motorola, Inc. | TMOS IV POWER FIELD EFFECT TRANSISTORS |
| mtm50n05e 2 3 4 5 6 |
MOTOROLA INC | TMOS IV POWER FIELD EFFECT TRANSISTORS |
| mtm8n60 2 3 4 5 |
MOTOROLA INC | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS |