參數(shù)資料
型號: MTD5N25E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
中文描述: 5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/10頁
文件大?。?/td> 252K
代理商: MTD5N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
0.05
0.02
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
40
ID = 5 A
10
10
150
20
80
60
120
1000
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
μ
s
100
μ
s
1 ms
10 ms
dc
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.1
0.01
SINGLE PULSE
D = 0.5
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
10
1.0
t, TIME (s)
相關(guān)PDF資料
PDF描述
MTD5P06E TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
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MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
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參數(shù)描述
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