參數(shù)資料
型號(hào)： MTD20P06
廠(chǎng)商： Motorola, Inc.
英文描述： TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
中文描述： TMOS是功率場(chǎng)效應(yīng)晶體管邏輯電平15安培，60伏特的RDS（on）\u003d 175毫歐
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 244K
代理商： MTD20P06
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
30
—
—
15
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
15 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
120
90
—
99
m
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
0.94
—
2.2
1.9
Vdc
Forward Transconductance
(VDS = 8.0 Vdc, ID = 9.5 Adc)
gFS
5.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
770
1064
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
360
504
Transfer Capacitance
—
130
182
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 1.3
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
18
25.2
ns
Rise Time
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc,
—
178
246.4
Turn–Off Delay Time
—
21
26.6
Fall Time
—
72
98
Gate Charge
(See Figure 8)
VGS = 5.0 Vdc)
—
15
22.4
nC
(VDS = 24 Vdc, ID =19 Adc,
—
3.0
—
—
11
—
—
8.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk
≥
2.0) (3)
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
3.1
2.56
3.4
—
Vdc
Reverse Recovery Time
(See Figure 15)
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
78
—
ns
(IS = 19 Adc, VGS = 0 Vdc,
—
50
—
—
28
—
Reverse Recovery Stored Charge
QRR
—
0.209
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516
μ
A).
相關(guān)PDF資料
PDF描述
MTD20P03HDL TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20P06HDL TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD2955E TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
MTD2N20 POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
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