參數(shù)資料
型號(hào)： MTD6N10E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
中文描述： 6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 211K
代理商： MTD6N10E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
2
4
6
8
0
4
8
10
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
10
0
4
8
12
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
ID, DRAIN CURRENT (AMPS)
8
12
14
0.15
0.35
0.55
0.65
0
4
8
12
16
0.20
0.30
0.40
0.45
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
1.0
1.4
1.8
0
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
60
100
120
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
VDS
≥
10 V
100
°
C
25
°
C
TJ = –55
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 3 A
9 V
8 V
7 V
6 V
5 V
15 V
2
6
0.25
0.45
0.8
1.2
1.6
2
6
10
0.25
0.35
1
3
5
7
3
5
7
9
2
6
10
2
6
10
14
40
80
TJ = 125
°
C
100
°
C
25
°
C
TJ = 25
°
C
相關(guān)PDF資料
PDF描述
MTD6N10 POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
MTD6N15 TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
MTD6N15T4 Power Field Effect Transistor DPAK for Surface Mount
MTD6N15-1 Power Field Effect Transistor DPAK for Surface Mount
MTD8N06E TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTD6N10E1 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD6N15 制造商:Rochester Electronics LLC 功能描述:
MTD6N15-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount
MTD6N15T4 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD6N15T4G 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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