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參數(shù)資料
| 型號： | MTD6N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
| 中文描述： | 6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 211K |
| 代理商： | MTD6N10E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
—
124
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.2
4.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.29
0.4
Ohm
—
—
1.75
—
2.9
2.5
Vdc
Forward Transconductance (VDS = 13 Vdc, ID = 3.0 Adc)
gFS
1.5
2.4
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
310
420
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
120
210
Reverse Transfer Capacitance
—
25
50
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
8.0
15
ns
Rise Time
(VDD = 50 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc,
—
31
49
Turn–Off Delay Time
—
13
31
Fall Time
—
12
27
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
10
14
nC
(VDS = 80 Vdc, ID = 6.0 Adc,
—
3.3
—
—
4.3
—
—
5.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.98
0.9
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
—
86.7
—
ns
(IS = 6.0 Adc, VGS = 0 Vdc,
—
64
—
tb
—
22.7
—
Reverse Recovery Stored Charge
QRR
—
0.327
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
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|---|---|
| MTD6N10E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD6N15 | 制造商:Rochester Electronics LLC 功能描述: |
| MTD6N15-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power Field Effect Transistor DPAK for Surface Mount |
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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