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參數(shù)資料
| 型號： | MTD2955E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| 中文描述： | 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 243K |
| 代理商： | MTD2955E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
– 7
0
–2
– 4
– 7
– 8
–10
0
– 6
– 12
– 18
– 24
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
–2
– 6
– 8
– 10
0
– 8
– 16
– 20
– 24
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
– 4
–10
–14
– 18
– 24
0.1
0.3
0.5
0.8
0.9
0
– 6
–12
–16
– 20
– 24
0.20
0.28
0.36
0.44
0.48
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.6
1.8
–15
– 25
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
– 35
– 45
– 60
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
TJ = – 55
°
C
25
°
C
VGS = 10 V
– 9
– 6
– 5
– 3
–1
TJ = 100
°
C
25
°
C
– 55
°
C
TJ = 25
°
C
VGS = 10 V
5 V
6 V
7 V
8 V
15 V
9 V
– 4
–12
– 3
– 4
– 5
– 9
0.7
0.6
0.4
0.2
– 2
– 6
– 8
–12
–16
– 20 – 22
– 2
– 8
– 4
–14
–18
–10
0.24
0.32
0.40
– 22
1.4
1.2
1.0
– 20
– 30
– 40
– 50
– 55
VGS = 10 V
ID = 6 A
100
°
C
VGS = 10 V
VGS = 0 V
100
°
C
25
°
C
TJ = 125
°
C
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