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參數(shù)資料
| 型號： | MTDF1N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| 中文描述： | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 225K |
| 代理商： | MTDF1N03HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
30
—
—
29
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
25
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(3)
VGS(th)
1.0
—
1.6
3.7
—
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 0.85 Adc)
(Cpk
≥
2.0)
(3)
RDS(on)
—
—
96
135
120
160
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.85 Adc)
(1)
gFS
1.0
2.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
140
—
pF
Output Capacitance
—
70
—
Transfer Capacitance
—
30
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDS = 15 Vd
(DS
VGS = 10 Vdc, RG = 6
) (1)
1 7 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
7.5
—
ns
Rise Time
—
10
—
Turn–Off Delay Time
,I
,
—
22
—
Fall Time
—
18
—
Turn–On Delay Time
(VDD = 15 Vdc, ID = 0.85 Adc,
(DD
,D
VGS = 4.5 Vdc, RG = 6
) (1)
0 85 Ad
—
7.0
—
ns
Rise Time
—
8.2
—
Turn–Off Delay Time
—
22
—
Fall Time
—
14.5
—
Gate Charge
(VDS = 24 Vd
(DS
VGS = 10 Vdc)
1 7 Ad
—
5.0
7.0
nC
—
0.5
—
,I
,
—
1.65
—
—
1.3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc) (1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.84
0.7
1.0
—
Vdc
Reverse Recovery Time
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s) (1)
1 7 Adc V
trr
ta
tb
—
20
—
ns
—
12
—
—
8.0
—
Reverse Recovery Storage Charge
QRR
—
0.012
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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|---|---|
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
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