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| 型號： | MTD20N06HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| 中文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 274K |
| 代理商： | MTD20N06HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
60
—
—
54
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
2.0
—
—
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
0.035
0.045
Ohm
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 20 Adc)
(ID = 10 Adc, TJ = 125
°
C)
VDS(on)
—
—
—
—
1.2
1.1
Vdc
Forward Transconductance
(VDS = 4.0 Vdc, ID = 10 Adc)
gFS
5.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
—
607
840
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
Coss
Crss
—
218
290
Transfer Capacitance
—
55
110
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
—
9.2
18
ns
Rise Time
(VDD = 30 Vdc, ID = 20 Adc,
VGS = 10 Vdc,
—
61.2
122
Turn–Off Delay Time
td(off)
tf
QT
Q1
Q2
Q3
—
19
38
Fall Time
—
36
72
Gate Charge
(See Figure 7)
VGS = 10 Vdc)
—
17
24
nC
(VDS = 48 Vdc, ID = 20 Adc,
—
3.4
—
—
7.75
—
—
7.46
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk
≥
8.0) (3)
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.95
0.88
1.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
—
35.7
—
ns
(IS = 20 Adc, VGS = 0 Vdc,
—
24
—
tb
—
11.7
—
Reverse Recovery Stored Charge
QRR
—
0.055
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516
μ
A).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD20N06HDL | TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| MTD20P03 | TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20N06 | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20P06 | TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM |
| MTD20P03HDL | TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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