- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄371151 > MTD20N06V (MOTOROLA INC) TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM PDF資料下載
參數(shù)資料
| 型號(hào)： | MTD20N06V |
| 廠(chǎng)商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| 中文描述： | 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 244K |
| 代理商： | MTD20N06V |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0) (3)
V(BR)DSS
30
—
—
15
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
15 Vdc, VDS = 0 Vdc)
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0) (3)
VGS(th)
1.0
—
1.5
4.0
2.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 9.5 Adc)
(Cpk
≥
2.0) (3)
RDS(on)
—
120
90
—
99
m
Drain–to–Source On–Voltage (VGS = 5.0 Vdc)
(ID = 19 Adc)
(ID = 9.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
0.94
—
2.2
1.9
Vdc
Forward Transconductance
(VDS = 8.0 Vdc, ID = 9.5 Adc)
gFS
5.0
6.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
770
1064
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
360
504
Transfer Capacitance
—
130
182
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 1.3
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
18
25.2
ns
Rise Time
(VDD = 15 Vdc, ID = 19 Adc,
VGS = 5.0 Vdc,
—
178
246.4
Turn–Off Delay Time
—
21
26.6
Fall Time
—
72
98
Gate Charge
(See Figure 8)
VGS = 5.0 Vdc)
—
15
22.4
nC
(VDS = 24 Vdc, ID =19 Adc,
—
3.0
—
—
11
—
—
8.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(Cpk
≥
2.0) (3)
(IS = 19 Adc, VGS = 0 Vdc)
(IS = 19 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
3.1
2.56
3.4
—
Vdc
Reverse Recovery Time
(See Figure 15)
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
78
—
ns
(IS = 19 Adc, VGS = 0 Vdc,
—
50
—
—
28
—
Reverse Recovery Stored Charge
QRR
—
0.209
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk = Absolute Value of Spec (Spec–AVG/3.516
μ
A).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD2955E | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTD2N20 | POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTD3055E1 | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount |
| MTD3055E | TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount |
| MTD4P05 | POWER FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL | 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
| MTD20P03HDL1 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD20P03HDL1G | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。