參數(shù)資料
型號(hào): MTD1N80E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
中文描述: 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 269K
代理商: MTD1N80E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 13. Thermal Response
,
A
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
A
20
15
10
5
025
50
75
100
125
150
10
1
0.1
0.01
0.1
1
10
100
1000
100
μ
s
10
μ
s
1 ms
10 ms
dc
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (SECONDS)
D = 0.5
0.2
r
(
0.1
0.05
0.02
0.01
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
ID = 1 A
相關(guān)PDF資料
PDF描述
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06HDL TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20P03 TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20N06 TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20P06 TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
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