參數資料
型號： MTD5P06V
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
中文描述： 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數： 3/10頁
文件大小： 245K
代理商： MTD5P06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
1
2
3
4
5
0
7
2
4
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
7
8
2
3
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4
8
0
1
2
3
6
ID
Figure 2. Transfer Characteristics
1
2
3
4
5
6
0.2
0.25
0.3
0.35
0.6
R
1
2
3
4
5
7
0.2
8
0.25
0.3
0.4
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
1.8
0.2
0.4
0.6
0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
30
40
1
50
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 125
°
C
15 V
–25
0
25
50
75
100
150
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 2.5 A
6
8
6
7 V
6 V
5 V
4 V
8 V
9 V
4
5
5
6
7
0.4
0.45
7
0.35
9
6
0.8
1
1.2
1.4
1.6
125
60
8
9
9
10
8
9
10
0.5
0.55
10
175
相關PDF資料
PDF描述
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相關代理商/技術參數
參數描述
MTD5P06V_03 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V1 制造商:ON Semiconductor 功能描述:POWER MOSFET 5 AMPS, 60 VOLTS P-CHANNEL DPAK 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD5P06VT4 功能描述:MOSFET 60V 5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD5P06VT4G 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD5P06VT4G 制造商:ON Semiconductor 功能描述:MOSFET
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