參數(shù)資料
型號: MTD1N80E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM
中文描述: 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 269K
代理商: MTD1N80E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
15 V
12
15
VGS = 0 V
0
200
400
1
100
100
300
600
500
TJ = 125
°
C
100
°
C
1000
16
14
13
10
0.4
1.2
0.8
1.6
2.0
D
I
2.0
1.2
0.8
0.4
00
5
10
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
8 V
6 V
4 V
5 V
TJ = 25
°
C
D
I
2.0
1.2
0.8
0.4
02.0
2.5
3.0
3.5
4.0
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–55
°
C
5.0
TJ = 100
°
C
25
°
C
R
11
9
0
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 0.5 A
–50
0
50
100
150
125
–25
25
75
2.5
2
1.5
1
0.5
0
1.6
1.6
4.5
5.5
3
9
6
0
0
0.50
1.0
1.50
2.0
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25
°
C
100
°
C
–55
°
C
18
0.25
0.75
1.25
1.75
12
15
10
700
800
0.1
25
°
C
VDS
10 V
相關PDF資料
PDF描述
MTD20N06HD TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20N06HDL TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM
MTD20P03 TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20N06 TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
MTD20P06 TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS RDS(on) = 175 MOHM
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