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參數(shù)資料
| 型號(hào)： | MTD9N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大小： | 257K |
| 代理商： | MTD9N10E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1.0
10
100
A
I
0.01
025
50
75
100
125
10
24
ID = 9 A
32
150
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
100
μ
s
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
VGS = 20 V
SINGLE
PULSE
TC = 25
°
C
1 ms
10 ms
1.0E–05
0.1
1.0
0.01
40
t, TIME (s)
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
dc
D = 0.5
10
μ
s
16
8
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
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