參數(shù)資料
型號(hào): MTD5N25E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
中文描述: 5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 3/10頁(yè)
文件大?。?/td> 252K
代理商: MTD5N25E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
0
2
4
6
8
10
6
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
TJ = 25
°
C
VDS
10 V
TJ = –55
°
C
100
°
C
4
8
2
5 V
6 V
7 V
VGS = 10 V
9 V
2
3
4
5
6
7
0
6
10
4
8
2
0
25
°
C
8 V
12
8
R
R
0
3
6
9
1
8
0
0.5
1.0
2.0
3.5
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 10 V
3.0
1.5
10
0.7
0.9
1.1
1.7
0
3
6
9
1
8
10
15 V
VGS = 10 V
R
(
–50
0
0.5
1.0
1.5
2.0
0
100
200
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
–25
0
25
50
75
100
125
150
VGS = 0 V
50
150
250
TJ = 125
°
C
25
°
C
100
°
C
VGS = 10 V
ID = 2.5 A
2.5
14
16
18
4
7
2
5
2.5
1.3
1.5
4
7
2
5
相關(guān)PDF資料
PDF描述
MTD5P06E TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
MTD5P06V TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
MTD6N10 POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
MTD6N15 TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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