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參數(shù)資料
| 型號： | MTD6N15-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Field Effect Transistor DPAK for Surface Mount |
| 中文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MTD6N15-1 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS — continued
Gate–Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate–Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSF
IGSSR
—
100
nAdc
—
100
nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
TJ = 100
°
C
VGS(th)
2.0
1.5
4.5
4.0
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 100
°
C)
RDS(on)
VDS(on)
—
0.3
Ohm
—
—
1.8
1.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc)
gFS
2.5
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
See Figure 11
Ciss
Coss
Crss
1200
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
—
500
Reverse Transfer Capacitance
—
120
SWITCHING CHARACTERISTICS*
(TJ = 100
°
C)
Turn–On Delay Time
See Figures 13 and 14
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
—
50
ns
Rise Time
(VDD = 25 Vdc, ID = 3.0 Adc,
RG = 50
)
—
180
Turn–Off Delay Time
—
200
Fall Time
—
100
Total Gate Charge
See Figure 12
15 (Typ)
30
nC
Gate–Source Charge
(VDS = 0.8 Rated VDSS,
ID = Rated ID, VGS = 10 Vdc)
8.0 (Typ)
—
Gate–Drain Charge
7.0 (Typ)
—
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
VGS = 0 Vdc,)
VSD
ton
trr
1.3 (Typ)
2.0
Vdc
Forward Turn–On Time
(IS = 6.0 Adc, di/dt = 25 A/
μ
s
Limited by stray inductance
Reverse Recovery Time
325 (Typ)
—
ns
* Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
T, TEMPERATURE (
°
C)
Figure 1. Power Derating
P
25
20
15
10
5
0
150
125
100
75
50
25
2.5
2
1.5
1
0.5
0
TA
TC
TC
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| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD6N20E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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