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參數(shù)資料
| 型號： | MTD6N15-1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Field Effect Transistor DPAK for Surface Mount |
| 中文描述： | 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MTD6N15-1 |
4
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 9. Maximum Rated Switching
Safe Operating Area
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
ID
TJ
≤
150
°
C
20
10
5
2
1
0.5
0.2
0.1
0.05
0.03
300
200
100
70
50
30
20
10
7
5
3
2
1
0.3 0.5 0.7
10
μ
s
1 ms
10 ms
dc
100
μ
s
TC = 25
°
C
VGS = 20 V SINGLE PULSE
20
15
10
5
0
0
20
40
60
80
100
120
140
160
FORWARD BIASED SAFE OPERATING AREA
The FBSOA curves define the maximum drain–to–source
voltage and drain current that a device can safely handle
when it is forward biased, or when it is on, or being turned on.
Because these curves include the limitations of simultaneous
high voltage and high current, up to the rating of the device,
they are especially useful to designers of linear systems. The
curves are based on a case temperature of 25
°
C and a maxi-
mum junction temperature of 150
°
C. Limitations for repetitive
pulses at various case temperatures can be determined by
using the thermal response curves. Motorola Application
Note, AN569, “Transient Thermal Resistance–General Data
and Its Use” provides detailed instructions.
SWITCHING SAFE OPERATING AREA
The switching safe operating area (SOA) of Figure 9 is the
boundary that the load line may traverse without incurring
damage to the MOSFET. The fundamental limits are the
peak current, IDM and the breakdown voltage, V(BR)DSS. The
switching SOA shown in Figure 8 is applicable for both turn–
on and turn–off of the devices for switching times less than
one microsecond.
The power averaged over a complete switching cycle must
be less than:
TJ(max) – TC
R
θ
JC
t, TIME OR PULSE WIDTH (ms)
Figure 10. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC(t) = 6.25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1000
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
50
100
200
500
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTD8N06E | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| MTD9N10E | TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| MTDF1N02HD | DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1P02HD | DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD6N15T4 | 功能描述:MOSFET 150V 6A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4G | 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N15T4GV | 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD6N20 | 制造商:ON Semiconductor 功能描述:MOSFET N D-PAK |
| MTD6N20E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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