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| 型號： | MTD8N06E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | 8 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 185K |
| 代理商： | MTD8N06E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
63
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
3.0
5.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 4.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.087
0.12
Ohm
—
—
0.7
—
1.2
1.0
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 4.0 Adc)
gFS
3.0
4.8
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc V
f = 1.0 MHz)
0 Vdc
Ciss
Coss
Crss
—
424
570
pF
Output Capacitance
—
180
250
Reverse Transfer Capacitance
—
45
90
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 30 Vdc, ID = 8.0 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
8 0 Ad
td(on)
tr
td(off)
tf
—
8.0
20
ns
Rise Time
—
31
60
Turn–Off Delay Time
—
21
40
Fall Time
)
—
25
50
Gate Charge
(See Figure 8)
(VDS = 48 Vdc,D
(DS
VGS = 10 Vdc)
8 0 Ad
QT
Q1
Q2
Q3
—
13.9
20
nC
—
2.6
—
,
—
6.6
—
—
6.1
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 8.0 Adc, VGS = 0 Vdc)
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.0
0.85
2.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 8 0 Ad
(S
dIS/dt = 100 A/
μ
s)
V
0 Vd
trr
ta
—
58.7
—
ns
—
44
—
GS
,
tb
—
14.7
—
Reverse Recovery Stored Charge
QRR
—
0.142
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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