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參數(shù)資料
| 型號(hào)： | MTD5N25E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM |
| 中文描述： | 5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 252K |
| 代理商： | MTD5N25E |
5
Motorola TMOS Power MOSFET Transistor Device Data
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
RG, GATE RESISTANCE (OHMS)
1
10
100
100
1
t
tf
td(off)
td(on)
300
V
250
150
100
0
10
0
QT, TOTAL CHARGE (nC)
V
12
8
4
2
4
6
14
VDS
VGS
8
0
Q1
Q2
QT
Q3
10
tr
VDD = 125 V
ID = 5 A
VGS = 10 V
TJ = 25
°
C
ID = 5 A
TJ = 25
°
C
0.5
0.6
0.7
0.8
0.9
0
2
5
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
I
VGS = 0 V
TJ = 25
°
C
4
3
0.55
0.65
0.75
0.85
1
6
2
10
12
50
200
0.95
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain–to–source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the transition
time (tr,tf) do not exceed 10
μ
s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used in
switching circuits with unclamped inductive loads. For reliable
operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E–FETs can withstand the stress of
drain–to–source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated continuous
current (ID), in accordance with industry custom. The energy
rating must be derated for temperature as shown in the
accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
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| MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD5N25E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola 功能描述:ON SEMICONDUCTOR NXC5D, NXF7D 制造商:ON Semiconductor 功能描述: |
| MTD5N25ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD5P06E | 制造商:Motorola Inc 功能描述: |
| MTD5P06V | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET P D-PAK |
| MTD5P06V_03 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 5 Amps, 60 Volts P−Channel DPAK |
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