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參數(shù)資料
| 型號(hào)： | MTD8N06E |
| 廠商： | MOTOROLA INC |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | 8 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 185K |
| 代理商： | MTD8N06E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
1
2
3
4
0
8
16
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
3
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4
5
6
8
0
8
16
ID
Figure 2. Transfer Characteristics
0
2
6
10
16
0.04
0.08
0.1
0.12
0.14
0
2
6
10
14
16
0.072
0.076
0.084
0.092
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.6
0
20
40
60
1
10
100
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 4 A
7 V
6 V
5 V
4 V
12
4
12
4
25
°
C
–55
°
C
0.06
4
8
14
12
0.088
0.08
4
8
12
VGS = 10 V
15 V
–50
–25
0
50
25
75
100
125
150
10
30
50
TJ = 125
°
C
25
°
C
8 V
9 V
7
1.4
0.8
1000
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