參數(shù)資料
型號： MTD20N06V
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM
中文描述： 20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 3/12頁
文件大?。?/td> 244K
代理商： MTD20N06V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
ID
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (
°
C)
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
0
3
2
5
1
4
0
8
16
24
40
Figure 1. On–Region Characteristics
0
8
24
32
40
Figure 2. Transfer Characteristics
0
8
16
28
40
0.06
0.08
0.12
0.14
0.16
0.06
0.08
0.12
0.16
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.8
– 50
0.9
1.0
1.1
1.3
1
100
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
32
1.0
2.0
3.0
4.0
5.0
5.5
VDS
≥
5 V
100
°
C
25
°
C
0.10
VGS = 5 V
– 55
°
C
25
°
C
0
16
32
40
0.14
0.10
– 25
0
25
50
75
100
125
150
1.2
0
4
12
28
32
20
VGS = 0 V
TJ = 125
°
C
TJ = – 55
°
C
TJ = 100
°
C
TJ = 25
°
C
VGS = 5 V
VGS = 5 V
ID = 10 A
1.5
2.5
3.5
4.5
10
8
24
16
VGS = 10 V
8 V
6 V
2.5 V
3 V
TJ = 25
°
C
4 V
3.5 V
4.5 V
5 V
100
°
C
16
4
12
24
36
12
28
36
20
32
8
24
4
20
10 V
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相關代理商/技術參數(shù)
參數(shù)描述
MTD20N06VT4 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD20P03 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20P03HDL 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
MTD20P03HDL1 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD20P03HDL1G 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 19A 3-Pin(3+Tab) IPAK Rail
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