參數(shù)資料
型號： MTD5P06E
廠商： MOTOROLA INC
元件分類： JFETs
英文描述： TMOS POWER FET 5.0 AMPERES 60 VOLTS RDS(on) = 0.55 OHM
中文描述： 5 A, 60 V, 0.55 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369A-13, DPAK-3
文件頁數(shù)： 3/10頁
文件大?。?/td> 208K
代理商： MTD5P06E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
2
4
6
7
0
4
8
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
9
0
6
10
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
8
10
0.20
0.36
0.52
0.60
0
4
ID, DRAIN CURRENT (AMPS)
8
12
14
0.30
0.34
0.42
0.46
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.7
1.1
1.5
0
20
60
50
70
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
100
°
C
25
°
C
TJ = –55
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 2.5 A
9 V
8 V
7 V
6 V
5 V
15 V
2
6
0.28
0.44
0.9
1.3
2
4
8
0.38
1
3
5
3
5
7
2
6
2
6
10
40
30
10
100
°
TJ = 125
°
C
25
°
C
相關PDF資料
PDF描述
MTD5P06V TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM
MTD6N10E TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
MTD6N10 POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT
MTD6N15 TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
MTD6N15T4 Power Field Effect Transistor DPAK for Surface Mount
相關代理商/技術參數(shù)
參數(shù)描述
MTD5P06V 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET P D-PAK
MTD5P06V_03 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 5 Amps, 60 Volts P−Channel DPAK
MTD5P06V1 制造商:ON Semiconductor 功能描述:POWER MOSFET 5 AMPS, 60 VOLTS P-CHANNEL DPAK 制造商:Rochester Electronics LLC 功能描述:- Bulk
MTD5P06VT4 功能描述:MOSFET 60V 5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD5P06VT4G 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*