參數(shù)資料
型號: MTDF1N03HD
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM
中文描述: 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 2/12頁
文件大?。?/td> 225K
代理商: MTDF1N03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
30
30
±
20
100
1.25
10
2.8
2.2
23
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
1 die operating
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
ID
ID
IDM
RTHJA
PD
200
0.63
5.0
2.0
1.6
16
2 die operating
Steady State
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 2.4 Apk, L = 69 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
ID
ID
IDM
TJ, Tstg
EAS
300
0.42
3.33
1.6
1.3
13
– 55 to 150
200
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
相關(guān)PDF資料
PDF描述
MTDF1P02HD DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM
MTE50N45 POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
MTE50N50 POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
MTE60N35 POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
MTE60N40 POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
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