參數(shù)資料
型號: MTD6N15T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Power Field Effect Transistor DPAK for Surface Mount
中文描述: 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369C-01, DPAK-3
文件頁數(shù): 10/10頁
文件大?。?/td> 231K
代理商: MTD6N15T4
10
Motorola TMOS Power MOSFET Transistor Device Data
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相關(guān)PDF資料
PDF描述
MTD6N15-1 Power Field Effect Transistor DPAK for Surface Mount
MTD8N06E TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM
MTD9N10E TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
MTDF1N02HD DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM
MTDF1N03HD DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM
相關(guān)代理商/技術(shù)參數(shù)
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MTD6N15T4G 功能描述:MOSFET NFET DPAK 150V 6A 300mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MTD6N15T4GV 功能描述:MOSFET Single N-Ch 150V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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