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參數(shù)資料
| 型號： | MTDF1N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| 中文描述： | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 225K |
| 代理商： | MTDF1N03HD |
7
Motorola TMOS Power MOSFET Transistor Device Data
I
t, TIME
Figure 13. Reverse Recovery Time (trr)
di/dt = 300 A/
μ
s
Standard Cell Density
trr
High Cell Density
trr
tb
ta
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curve (Figure
14) defines the maximum simultaneous drain–to–source vol-
tage and drain current that a transistor can handle safely
when it is forward biased. Curves are based upon maximum
peak junction temperature and a case temperature (TC) of
25
°
C. Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the pro-
cedures discussed in AN569, “Transient Thermal Resistance
– General Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded, and that the transition
time (tr, tf) does not exceed 10
μ
s. In addition the total power
averaged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and must be adjusted for operating conditions
differing from those specified. Although industry practice is to
rate in terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 16). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 14. Maximum Rated Forward Biased
Safe Operating Area
A
0
25
50
75
100
125
120
VDD = 30 V
VGS = 10 V
IL = 2.4 A
L = 69 mH
200
150
80
40
160
Figure 15. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
10
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
10
0.1
dc
10 ms
1
100
100
1 ms
100
μ
s
10
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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