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參數(shù)資料
| 型號： | MTDF1P02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| 中文描述： | 1300 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 232K |
| 代理商： | MTDF1P02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
20
—
—
14
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(1) (3)
VGS(th)
0.7
—
0.95
2.2
1.4
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.6 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
(Cpk
≥
2.0)
(1) (3)
RDS(on)
—
—
146
220
175
280
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.6 Adc)
(1)
gFS
1.3
2.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
15 Vdc V
Ciss
Coss
Crss
—
225
—
pF
Output Capacitance
—
150
—
Transfer Capacitance
—
60
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDS = 10 Vd
(DS
VGS = 4.5 Vdc, RG = 6
) (1)
1 2 Ad
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
15
—
ns
Rise Time
—
27
—
Turn–Off Delay Time
,I
,
—
60
—
Fall Time
—
72
—
Turn–On Delay Time
(VDD = 10 Vdc,D
(DD
VGS = 2.7 Vdc, RG = 6
) (1)
0 6 Ad
—
20
—
ns
Rise Time
—
94
—
Turn–Off Delay Time
,
—
49
—
Fall Time
—
76
—
Gate Charge
(VDS = 16 Vd
(DS
VGS = 4.5 Vdc) (1)
1 2 Ad
—
5.3
7.5
nC
—
0.7
—
,I
,
—
2.6
—
—
1.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.2 Adc, VGS = 0 Vdc) (1)
(IS = 1.2 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.89
0.72
1.1
—
Vdc
Reverse Recovery Time
(IS = 1.2 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s) (1)
1 2 Adc V
trr
ta
tb
—
86
—
ns
—
27
—
—
59
—
Reverse Recovery Storage Charge
QRR
—
0.115
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
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