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參數(shù)資料
| 型號(hào)： | MTD9N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 9.0 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
| 中文描述： | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 257K |
| 代理商： | MTD9N10E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
2
4
7
8
10
0
8
12
10
18
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
3.5
5.5
6.5
6.0
7.5
0
10
14
16
18
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
10
14
18
0.15
0.20
0.30
0.45
0
6
12
16
0.15
0.19
0.23
0.25
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
1.7
1.9
30
50
70
0.1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
25
°
C
100
°
C
VGS = 10 V
9
6
5
3
1
TJ = 25
°
C
VGS = 10 V
4 V
5 V
25
°
C
100
°
C
VGS = 0 V
12
3.0
4.0 4.5 5.0
7.0
0.40
0.35
0.25
2
6
8
12
16
2
8
4
14
18
10
0.17
0.21
1.5
0.7
0.5
40
60
100
16
14
2.5
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
VGS = 10 V
ID = 4.5 A
TJ = 125
°
C
15 V
6
4
2
7 V
2
6
8
4
8.0
9.0
8.5
TJ = – 55
°
C
1.1
1.3
0.9
1.0
80
90
8 V
6 V
0.10
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