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參數(shù)資料
| 型號(hào)： | MTD8N06E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 8.0 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| 中文描述： | 8 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 185K |
| 代理商： | MTD8N06E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
0.1
1
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 13. Thermal Response
1
100
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
10
100
ID = 8 A
10
150
t, TIME (ms)
Figure 14. Diode Reverse Recovery Waveform
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
80
60
40
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
100
μ
s
1 ms
10 ms
dc
20
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
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