參數(shù)資料
型號: MTDF1N03HD
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM
中文描述: 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù): 4/12頁
文件大小: 225K
代理商: MTDF1N03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
I
R
R
0
0
0.5
1.5
2
0
1
3
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.4
0.5
0.6
0.08
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS
10 V
TJ = –55
°
C
25
°
C
100
°
C
0.3
4
2
0.1
TJ = 25
°
C
2
4
1
2
2.5
3
3.5
4
0.2
0
1
2
10
0
5
10
15
30
20
25
0
0.12
0.16
3
2
4
8
6
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3
4
10 V
VGS = 4.5
TJ = 25
°
C
R
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0
50
100
150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 0.85 A
125
75
25
–25
VGS = 0 V
TJ = 125
°
C
100
°
C
1
6 V
2.7 V
2.9 V
3.1 V
4.5 V
VGS = 10 V
ID = 1.7 A
TJ = 25
°
C
3.3 V
1.5
0
0.1
0.14
0.18
0.1
25
°
C
2.3 V
2.5 V
3.9 V
3.7 V
3.5 V
4.5
2.5
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