| 型號(hào) | 廠商 | 描述 |
| dl-5538s-c390-sb 2 |
Optoway Technology Inc. | 1270 nm ~ 1610 nm DFB LD MODULES 1.25 Gbps CWDM MQW-DFB LD RECEPTACLE |
| dl-5538s-c390-sbs 2 |
Optoway Technology Inc. | 1270 nm ~ 1610 nm DFB LD MODULES 1.25 Gbps CWDM MQW-DFB LD RECEPTACLE |
| dl-5538s-c390-ss 2 |
Optoway Technology Inc. | 1270 nm ~ 1610 nm DFB LD MODULES 1.25 Gbps CWDM MQW-DFB LD RECEPTACLE |
| dl-5538s-c390-t 2 |
Optoway Technology Inc. | 1270 nm ~ 1610 nm DFB LD MODULES 1.25 Gbps CWDM MQW-DFB LD RECEPTACLE |
| dl-5538s-c390-ts 2 |
Optoway Technology Inc. | 1270 nm ~ 1610 nm DFB LD MODULES 1.25 Gbps CWDM MQW-DFB LD RECEPTACLE |
| k-03203gx |
Electronic Theatre Controls, Inc. | LCD BACK LIGHT, COB TYPE, LCD CHARACTER 16��1(L) |
| k-04204gx |
Electronic Theatre Controls, Inc. | LCD BACK LIGHT, COB TYPE, LCD CHARACTER 16��1(L) |
| k-04211gx-p |
Electronic Theatre Controls, Inc. | LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2, 16 X 4 |
| k-05205gx |
Electronic Theatre Controls, Inc. | LCD BACK LIGHT, COB TYPE, LCD CHARACTER 20 X 2, 16 X 4 |
| k08pn60 2 3 4 5 6 7 |
Fairchild Semiconductor Corporation | TRIAC (Silicon Bidirectional Thyristor) |
| k11044 2 3 4 5 |
TOKO Inc. | TEMPERATURE SENSOR IC |
| k11044-44c 2 3 4 5 |
TOKO Inc. | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 820uF; Voltage: 25V; Case Size: 12.5x20 mm; Packaging: Bulk |
| k11044tl 2 3 4 5 |
TOKO Inc. | TEMPERATURE SENSOR IC |
| k1322 2 3 4 5 6 |
OKI SEMICONDUCTOR CO., LTD. | Power FET (Ceramic Package Type) |
| k1536blc |
Electronic Theatre Controls, Inc. | LOW COST SURFACE MOUNT VCXOS |
| k1536blcm |
Electronic Theatre Controls, Inc. | LOW COST SURFACE MOUNT VCXOS |
| k1713 2 3 |
Hamamatsu Photonics | Two-color detector |
| k1713-01 2 3 |
Hamamatsu Photonics | Two-color detector |
| k1713-02 2 3 |
Hamamatsu Photonics | Two-color detector |
| k1713-05 2 3 |
Hamamatsu Photonics | Two-color detector |
| k1713-08 2 3 |
Hamamatsu Photonics | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 3300uF; Voltage: 10V; Case Size: 12.5x35.5 mm; Packaging: Bulk |
| k1713-09 2 3 |
Hamamatsu Photonics | Two-color detector |
| k179 2 3 4 |
SIEMENS AG | Silicon Piezoresistive Absolute Pressure Sensor |
| k1b6416b6c 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| k1s161611a 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s161611a-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 8x5 mm; Packaging: Bulk |
| k1s16161ca 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s16161ca-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s1616b1a-fi70 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616b1a 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616b1a-bi70 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616b1a-bi85 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616b1a-fi85 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616b1a-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Uni-Transistor Random Access Memory |
| k1s1616bca 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s2816bcm 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | Evaluation Module for a High-Brightness LED Driver using the TPS54160 |
| k1s2816bcm-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | TPS54262EVM Evaluation Module |
| k1s321611c 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-fi70 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Uni-Transistor Random Access Memory |
| k1s32161cc-fi70 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s32161cc-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s32161cc 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s3216b1c 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Uni-Transistor Random Access Memory |
| k1s3216b1c-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Uni-Transistor Random Access Memory |
| k1s3216bcd 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s64161cc 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s6416bcc 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1s6416bcc-i 2 3 4 5 6 7 8 9 10 |
SAMSUNG SEMICONDUCTOR CO. LTD. | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| k1v10 2 3 4 5 6 7 8 9 10 |
Shindengen Electric Manufacturing Company, Ltd. | Sidac |