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參數(shù)資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 8/46頁 |
| 文件大?。?/td> | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 8 -
U
t
RAM
POWER UP SEQUENCE
After applying V
CC
upto minimum operating voltage(1.7V), drive CS High first and then drive MRS High. Then the device gets into the
Power Up mode. Wait for minimum 200
μ
s to get into the normal operation mode. During the Power Up mode, the standby current can
not be guaranteed. To get the stable standby current level, at least one cycle of active operation should be implemented regardless of
wait time duration. To get the appropriate device operation, be sure to keep the following power up sequence.
1. Apply power.
2. Maintain stable power(Vcc min.=1.7V) for a minimum 200
μ
s with CS and MRS high.
200
μ
s
~
V
CC
Fig.3 POWER UP TIMING
V
CC(Min)
Min. 200
μ
s
≈
MRS
CS
≈
Normal Operation
Min. 0ns
Power Up Mode
(Note)
1. After V
CC
reaches V
CC
(Min.), wait 200
μ
s with CS and MRS high. Then the device gets into the normal operation.
Min. 0ns
Fig.4 STANDBY MODE STATE MACHINES
Default mode after power up is Asynchronous mode(4 Page Read and Asynchronous Write). But this default mode is not 100%
guaranteed so MRS setting sequence is highly recommended after power up.
For entry to PAR mode, drive
MRS pin into V
IL
for over 0.5
μ
s(suspend period) during standby mode after MRS setting has
been completed(A4=1, A3=0). If
MRS pin is driven into V
IH
during PAR mode, the device gets back to the standby mode
without wake up sequence.
CS=V
IH
CS=V
IL
, UB or LB=V
IL
MRS=V
IH
Power On
Initial State
(Wait 200
μ
s)
Active
Standby
Mode
CS=V
IH
MRS=V
IH
PAR
Mode
MRS Setting
CS=UB=LB=V
IL
,
WE=V
IL
, MRS=V
IL
MRS Setting
CS=V
IL
,
WE=V
IL
, MRS=V
IL
MRS=V
IH
MRS=V
IL
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