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參數(shù)資料
| 型號(hào)： | K1S3216BCD |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位頁面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 168K |
| 代理商： | K1S3216BCD |
Revision 1.0
April 2005
K1S3216BCD
- 5 -
U
t
RAM
DC AND OPERATING CHARACTERISTICS
1. Typical values are tested at V
CC
=1.8V,
T
A
=25
°
C and not guaranteed.
2.
I
SB1
is measured after 60ms from the time when standby mode is set up.
Item
Symbol
Test Conditions
Min
Typ
1)
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS
1
=V
IH or
CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS1
≤
0.2V,
LB
≤
0.2V or/and UB
≤
0.2V, CS
2
≥
Vcc-0.2V, V
IN
≤
0.2V or
V
IN
≥
V
CC
-0.2V
-
-
5
mA
I
CC2
Cycle time=Min, I
IO
=0mA, 100% duty, CS1=V
IL
, CS
2
=V
IH,
LB=V
IL
or/and
UB=V
IL
,V
IN
=V
IL
or V
IH
-
35
mA
Output low voltage
V
OL
I
OL
=0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
=-0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
2)
Other inputs = 0~Vcc
1) CS
1
≥
Vcc-0.2V, CS
2
≤
Vcc-0.2V (CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
-
-
100
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
3ns.
3. Undershoot: -1.0V in case of pulse width
≤
3ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.85
2.0
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
Vcc+0.3
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
PRODUCT LIST
Industrial Temperature Product(-40~85
°
C)
Part Name
Function
K1S3216BCD-FI70
K1S3216BCD-FI85
48-FBGA, 70ns, 1.8V
48-FBGA, 85ns, 1.8V
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