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參數(shù)資料
| 型號： | K1S3216B1C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 180K |
| 代理商： | K1S3216B1C |
Revision 0.1
June 2003
K1S3216B1C
- 5 -
U
t
RAM
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.8/2.0
2.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
1.4
-
V
CC
+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS
1
≤
0.2V, LB
≤
0.2V
or/and UB
≤
0.2V, CS
2
≥
V
CC
-
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty,
CS
1
=V
IL,
CS
2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
-
-
5
mA
I
CC2
-
-
30
mA
Output low voltage
V
OL
I
OL
= 0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
= -0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
Other inputs=0~Vcc
1) CS
1
≥
V
CC
-0.2V
,
CS
2
≥
V
CC
-
0.2V(CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
-
-
100
μ
A
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K1S3216B1C-FI70
K1S3216B1C-FI85
48-FBGA, 70ns, 1.8V/2.0V
48-FBGA, 85ns, 1.8V/2.0V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S3216B1C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S3216B1C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S3216BCD | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
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