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參數(shù)資料
| 型號： | K1S64161CC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 204K |
| 代理商： | K1S64161CC |
Revision 1.0
April 2005
K1S64161CC
- 10 -
U
t
RAM
PACKAGE DIMENSION
6
5
4
3
2
1
A
B
C
D
E
F
G
H
C
B
C
B
C
Bottom View
Top View
D
E
E
C
Side View
A
Y
Detail A
Min
Typ
Max
A
-
0.75
-
B
5.90
6.00
6.10
B1
-
3.75
-
C
7.90
8.00
8.10
C1
-
5.25
-
D
0.40
0.45
0.50
E
-
-
1.00
E1
0.25
-
-
Y
-
-
0.10
B1
#A1
Notes.
1. Bump counts: 48(8 row x 6 column)
2. Bump pitch : (x,y)=(0.75 x 0.75)(typ.)
3. All tolerence are
±
0.050 unless
specified beside figures.
4. Typ : Typical
5. Y is coplanarity
48 BALL FINE PITCH BGA(0.75mm ball pitch)
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1V10 | Sidac |
| K1V11 | Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk |
| K1V12 | Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
| K1S6416BCC | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1-SC-B60 | 制造商:Elma Electronic 功能描述:Bulk |
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