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參數(shù)資料
| 型號(hào)： | K1S1616B1A-BI70 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/10頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | K1S1616B1A-BI70 |
Revision 0.0
October 2003
K1S1616B1A
- 7 -
U
t
RAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS
1
=OE=V
IL
, CS
2
=WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
Data Valid
High-Z
t
RC
CS
1
Address
UB, LB
OE
Data out
t
AA
t
RC
t
OH
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
NOTES
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. If invalid address signals shorter than min. t
RC
are continuously repeated for over 4us, the device needs a normal read timing(t
RC
) or
needs to sustain standby state for min. t
RC
at least once in every 4us.
CS
2
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| K1S1616B1A-BI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
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相關(guān)代理商/技術(shù)參數(shù) |
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| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616BCA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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