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參數資料
| 型號： | K1S6416BCC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數： | 2/10頁 |
| 文件大?。?/td> | 146K |
| 代理商： | K1S6416BCC |
Revision 1.0
April 2005
K1S6416BCC
- 2 -
U
t
RAM
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S6416BCC-I
Industrial(-40~85
°
C)
1.7~2.0V
70ns
120
μ
A(< 40
°
C)
40mA
TBD
180
μ
A(< 85
°
C)
4M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S6416BCC is fabricated by SAMSUNG
′
s advanced
CMOS technology using one transistor memory cell. The device
supports 4 page read operation and Industrial temperature
range. The device supports dual chip selection for user inter-
face. The device also supports internal Temperature Compen-
sated Self Refresh mode for the standby power saving at room
temperature range.
FEATURES
Process Technology: CMOS
Organization: 4M x16 bit
Power Supply Voltage: 1.7~2.0V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: TBD
PIN DESCRIPTION
1) Reserved for future use
2) V
CC
and V
CCQ
should be the same level
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
Vcc/V
CCQ
2)
Power Supply(core / I/O)
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
21
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
V
CC
V
SS
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
TBD
V
CCQ
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相關代理商/技術參數 |
參數描述 |
|---|---|
| K1S6416BCC-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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