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參數(shù)資料
| 型號(hào)： | K1S64161CC |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位頁(yè)面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 204K |
| 代理商： | K1S64161CC |
Revision 1.0
April 2005
K1S64161CC
- 2 -
U
t
RAM
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S64161CC-I
Industrial(-40~85
°
C)
2.7~3.1V
70ns
120
μ
A(< 40
°
C)
40mA
48-FBGA-6.00x8.00
180
μ
A(< 85
°
C)
4M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S64161CC is fabricated by SAMSUNG
′
s advanced
CMOS technology using one transistor memory cell. The device
supports 4 page read operation and Industrial temperature
range. The device supports dual chip selection for user inter-
face. The device also supports internal Temperature Compen-
sated Self Refresh mode for the standby power saving at room
temperature range.
FEATURES
Process Technology: CMOS
Organization: 4M x16 bit
Power Supply Voltage: 2.7~3.1V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: 48-FBGA-6.00x8.00
PIN DESCRIPTION
1
1) Reserved for future use
2) V
CC
and V
CCQ
should be the same level
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
Vcc/V
CCQ
2)
Power Supply(core / I/O)
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
21
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
V
CC
V
SS
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
V
CCQ
48-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
A21
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
2
3
4
5
6
A
B
C
D
E
F
G
H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S6416BCC | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
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| K1V11 | Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 330uF; Voltage: 35V; Case Size: 10x12.5 mm; Packaging: Bulk |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S64161CC-BI70000 | 制造商:Samsung Semiconductor 功能描述:SRAM ASYNC SGL 2.9V 64MBIT 4MX16 70NS 48FBGA - Tape and Reel |
| K1S64161CD-BI70000 | 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel |
| K1S6416BCC | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S6416BCC-I | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1-SC-B60 | 制造商:Elma Electronic 功能描述:Bulk |
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