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參數(shù)資料
| 型號： | K1S6416BCC-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 146K |
| 代理商： | K1S6416BCC-I |
Revision 1.0
April 2005
K1S6416BCC
- 3 -
U
t
RAM
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min. and V
CCQ
min.=1.7V) for a minimum 200
μ
s with CS1=high.or CS2=low.
Min. 200
μ
s
≈
TIMING WAVEFORM OF POWER UP(1)
(CS
1
controlled)
TIMING WAVEFORM OF POWER UP(2)
(CS
2
controlled)
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.) and V
CCQ
(Min.), wait 200
μ
s with CS
2
low. Then the device gets into the normal operation.
≈
≈
V
CC
CS
1
CS
2
V
CC(Min)
POWER UP(1)
1. After V
CC
reaches V
CC
(Min.) and V
CCQ
(Min.), wait 200
μ
s with CS
1
high. Then the device gets into the normal operation.
Min. 200
μ
s
≈
V
CC
CS
1
CS
2
V
CC(Min)
≈
≈
Normal Operation
Power Up Mode
Normal Operation
Power Up Mode
≈
V
CCQ
V
CCQ(Min)
≈
V
CCQ
V
CCQ(Min)
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