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參數(shù)資料
| 型號(hào)： | K1S16161CA-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位頁(yè)面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | K1S16161CA-I |
Revision 0.0
December 2003
K1S16161CA
- 3 -
U
t
RAM
Preliminary
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=2.7V) for a minimum 200
μ
s with CS1=high.or CS2=low.
Min. 200
μ
s
≈
TIMING WAVEFORM OF POWER UP(1)
(CS
1
controlled)
TIMING WAVEFORM OF POWER UP(2)
(CS
2
controlled)
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.), wait 200
μ
s with CS
2
low. Then the device gets into the normal operation.
≈
≈
V
CC
CS
1
CS
2
V
CC(Min)
POWER UP(1)
1. After V
CC
reaches V
CC
(Min.), wait 200
μ
s with CS
1
high. Then the device gets into the normal operation.
Min. 200
μ
s
≈
V
CC
CS
1
CS
2
V
CC(Min)
≈
≈
Normal Operation
Power Up Mode
Normal Operation
Power Up Mode
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S1616B1A-FI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S1616B1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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