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參數(shù)資料
| 型號： | K1S2816BCM-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TPS54262EVM Evaluation Module |
| 中文描述： | 8M × 16位位的頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 146K |
| 代理商： | K1S2816BCM-I |
Revision 1.0
April 2005
K1S2816BCM
- 5 -
U
t
RAM
DC AND OPERATING CHARACTERISTICS
1. Standby mode is supposed to be set up after at least one active operation.after power up.
I
SB1
is measured after 60ms from the time when standby mode is set up.
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS
1
=V
IH
or CS
2
=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC2
Cycle time=t
RC
+3t
PC
, I
IO
=0mA, 100% duty, CS
1
=V
IL,
CS
2
=
V
IH
, LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
-
-
40
mA
Output low voltage
V
OL
I
OL
=0.1mA
-
-
0.2
V
Output high voltage
V
OH
I
OH
=-0.1mA
1.4
-
-
V
Standby Current(CMOS)
I
SB1
1)
Other inputs=0~Vcc
1) CS
1
≥
V
CC
-0.2V
,
CS
2
≥
V
CC
-
0.2V(CS
1
controlled) or
2) 0V
≤
CS
2
≤
0.2V(CS
2
controlled)
< 40
°
C
-
-
130
μ
A
< 85
°
C
-
-
250
μ
A
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
1.7
1.85
2.0
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
0.8 x V
CC
-
Vcc+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
PRODUCT LIST
Industrial Temperature Product(-40~85
°
C)
Part Name
Function
K1S2816BCM
70ns, 1.8V
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