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參數(shù)資料
| 型號： | K1S161611A-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 47uF; Voltage: 25V; Case Size: 8x5 mm; Packaging: Bulk |
| 中文描述： | 1Mx16位統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 179K |
| 代理商： | K1S161611A-I |
Revision 0.1
November 2003
K1S161611A
- 3 -
U
t
RAM
Preliminary
POWER UP SEQUENCE
1. Apply power.
2. Maintain stable power(Vcc min.=2.7V) for a minimum 200
μ
s with CS1=high or CS2=low.
Min. 200
μ
s
≈
TIMING WAVEFORM OF POWER UP(1)
(CS1 controlled)
TIMING WAVEFORM OF POWER UP(2)
(CS2 controlled)
POWER UP(2)
1. After V
CC
reaches V
CC
(Min.), wait 200
μ
s with CS
2
low. Then the device gets into the normal operation.
≈
≈
V
CC
CS1
CS2
V
CC(Min)
POWER UP(1)
1. After V
CC
reaches V
CC
(Min.), wait 200
μ
s with CS1 high. Then the device gest into the normal operation.
Min. 200
μ
s
≈
V
CC
CS1
CS2
V
CC(Min)
≈
≈
Normal Operation
Power Up Mode
Normal Operation
Power Up Mode
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PDF描述 |
|---|---|
| K1S16161CA | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S16161CA | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S16161CA-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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