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參數(shù)資料
| 型號： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 12/46頁 |
| 文件大小： | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 12 -
U
t
RAM
MRS pin Control Type Mode Register Setting Timing
In this device(K1B6416B6C), MRS pin is used for two purposes. One is to get into the mode register setting and the other one is to
execute Partial Array Refresh mode.
To get into the Mode Register Setting, the system must drive MRS pin to V
IL
and immediately(within 0.5
μ
s) issue a write com-
mand(drive CS, ADV, UB, LB and WE to V
IL
and drive OE to V
IH
during valid address). If the subsequent write command(WE signal
input) is not issued within 0.5
μ
s, then the device might get into the PAR mode.
Fig.5 MODE REGISTER SETTING TIMING
(OE=V
IH
)
Register Update Complete
t
WU
Address
UB, LB
WE
t
WC
t
CW
t
AW
t
BW
t
WP
t
AS
t
MW
CS
Register Write Start
Register Write Complete
ADV
MRS
1
2
3
4
5
6
7
8
9
10
11
12
13
CLK
0
(MRS SETTING TIMING)
1. Clock input is ignored.
Table 8. MRS AC CHARACTERISTICS
(V
CC
=1.7~2.0V, T
A
=-40 to 85
°
C, Maximum Main Clock Frequency=66MHz)
Parameter List
Symbol
Speed
Units
Min
Max
MRS
MRS Enable to Register Write Start
End of Write to MRS Disable
t
MW
t
WU
0
0
500
-
ns
ns
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