- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374252 > K1S321611C (SAMSUNG SEMICONDUCTOR CO. LTD.) 2Mx16 bit Uni-Transistor Random Access Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | K1S321611C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 2Mx16 bit Uni-Transistor Random Access Memory |
| 中文描述： | 2Mx16位統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 179K |
| 代理商： | K1S321611C |
Revision 0.2
August 2003
K1S321611C
- 5 -
U
t
RAM
Preliminary
RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: Vcc+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
2.7
2.9
3.1
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
2.2
-
V
CC
+0.3
2)
V
Input low voltage
V
IL
-0.3
3)
-
0.6
V
CAPACITANCE
1)
(f=1MHz, T
A
=25
°
C)
1. Capacitance is sampled, not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
C
IN
V
IN
=0V
-
8
pF
Input/Output capacitance
C
IO
V
IO
=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
I
LI
V
IN
=Vss to Vcc
-1
-
1
μ
A
Output leakage current
I
LO
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
,
V
IO
=Vss to Vcc
-1
-
1
μ
A
Average operating current
I
CC1
Cycle time=1
μ
s, 100% duty, I
IO
=0mA, CS1
≤
0.2V, LB
≤
0.2V
or/and UB
≤
0.2V, CS2
≥
V
CC
-
0.2V, V
IN
≤
0.2V or V
IN
≥
V
CC
-
0.2V
Cycle time=Min, I
IO
=0mA
,
100% duty,
CS1=V
IL,
CS2
=
V
IH
LB=V
IL
or/and UB=V
IL
, V
IN
=V
IH
or V
IL
-
-
7
mA
I
CC2
-
-
35
mA
Output low voltage
V
OL
I
OL
= 2.1mA
-
-
0.4
V
Output high voltage
V
OH
I
OH
= -1.0mA
2.4
-
-
V
Standby Current(CMOS)
I
SB1
Other inputs=0~Vcc
1) CS1
≥
V
CC
-0.2V
,
CS2
≥
V
CC
-
0.2V(CS1 controlled) or
2) 0V
≤
CS2
≤
0.2V(CS2 controlled)
-
-
100
μ
A
PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K1S321611C-FI70
48-FBGA, 70ns, 2.9V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S321611C-FI70 | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-I | 2Mx16 bit Uni-Transistor Random Access Memory |
| K1S32161CC-FI70 | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S32161CC-I | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S32161CC | 2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S321611C-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-fi70000 | 制造商:Samsung Semiconductor 功能描述: |
| K1S321611C-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321615M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321615M-E | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。