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參數(shù)資料
| 型號： | K1S2816BCM-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | TPS54262EVM Evaluation Module |
| 中文描述： | 8M × 16位位的頁面模式統(tǒng)一晶體管隨機存取存儲器 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 146K |
| 代理商： | K1S2816BCM-I |
Revision 1.0
April 2005
K1S2816BCM
- 1 -
U
t
RAM
Document Title
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision History
Revision No.
0.0
0.1
1.0
Remark
Preliminary
Preliminary
Final
History
Initial Draft
- Design Target
Revised
- Updated "TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Con-
trolled)
" in page 8 and added tWHP(WE High Pulse Width) parameter
as Min.5ns
- Added comment on standby current(I
SB1
) measure condition as
"Standby mode is supposed to be set up after at least one active
operation after power up. I
SB1
is measured after 60ms from the time
when standby mode is set up."
- Changed I
SB1
value(< 85
°
C) from 200
μ
A into 250
μ
A
Finalize
- Changed t
OH
from 5ns to 3ns
Draft Date
April 12, 2004
July 12, 2004
April 06, 2005
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