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參數(shù)資料
| 型號(hào)： | K1B6416B6C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
| 中文描述： | 4Mx16位同步突發(fā)統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 18/46頁(yè) |
| 文件大?。?/td> | 768K |
| 代理商： | K1B6416B6C |
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Revision 1.0
January 2005
K1B6416B6C
- 18 -
U
t
RAM
Table 13. PRODUCT LIST
Industrial Temperature Products(-40~85
°
C)
Part Name
Function
K1B6416B6C
1.8V, 70ns, 66MHz
Table 14. ABSOLUTE MAXIMUM RATINGS
1)
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reli-
ability.
Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-0.2 to V
CC
+0.3V
V
Power supply voltage relative to Vss
V
CC
-0.2 to 2.5V
V
Power Dissipation
P
D
1.0
W
Storage temperature
T
STG
-65 to 150
°
C
Operating Temperature
T
A
-40 to 85
°
C
Table 15. RECOMMENDED DC OPERATING CONDITIONS
1)
1. T
A
=-40 to 85
°
C, otherwise specified.
2. Overshoot: V
CC
+1.0V in case of pulse width
≤
20ns.
3. Undershoot: -1.0V in case of pulse width
≤
20ns.
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Power supply voltage
V
CC
1.7
1.85
2.0
V
Ground
Vss
0
0
0
V
Input high voltage
V
IH
0.8 x V
CC
-
V
CC
+0.2
2)
V
Input low voltage
V
IL
-0.2
3)
-
0.4
V
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