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參數(shù)資料
| 型號(hào)： | K1S1616BCA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位頁(yè)面模式統(tǒng)一晶體管隨機(jī)存取存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 9/10頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | K1S1616BCA |
Revision 0.0
December 2003
K1S1616BCA
- 9 -
U
t
RAM
Preliminary
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
TIMING WAVEFORM OF WRITE CYCLE(4)
(UB, LB Controlled)
NOTES
(WRITE CYCLE)
1. A wri
t
e occurs during the overlap(t
WP
) of low CS
1
and low WE. A write begins when CS
1
goes low and WE goes low with asserting
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest tran-
sition when CS
1
goes high and WE goes high. The
t
WP
is measured from the beginning of write to the end of write.
2.
t
CW
is measured from the CS
1
going low to the end of write.
3. t
AS
is measured from the address valid to the beginning of write.
4.
t
WR
is measured from the end of write to the address change.
t
WR
is applied in case a write ends with CS
1
or WE going high.
t
WC
t
CW
t
BW
t
WP
t
DH
t
DW
t
WR
t
AW
t
AS
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(3)
(CS
2
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
t
WC
t
CW
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR
t
AS
CS
1
CS
2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S2816BCM | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S2816BCM-I | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:8Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S321611C | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| K1S321611C-FI70 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:2Mx16 bit Uni-Transistor Random Access Memory |
| k1s321611c-fi70000 | 制造商:Samsung Semiconductor 功能描述: |
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