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參數(shù)資料
| 型號： | K1S16161CA |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位頁面模式統(tǒng)一晶體管隨機(jī)存取存儲器 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 186K |
| 代理商： | K1S16161CA |
Revision 0.0
December 2003
K1S16161CA
- 2 -
U
t
RAM
Preliminary
PRODUCT FAMILY
Product Family
Operating Temp.
Vcc Range
Speed
(t
RC
)
Power Dissipation
PKG Type
Standby
(I
SB1
, Max.)
Operating
(I
CC2
, Max.)
K1S16161CA-I
Industrial(-40~85
°
C)
2.7~3.1V
70ns
80
μ
A
35mA
48-FBGA-6.00x7.00
1M x 16 bit Page Mode Uni-Transistor CMOS RAM
GENERAL DESCRIPTION
The K1S16161CA is fabricated by SAMSUNG
′
s advanced
CMOS technology using one transistor memory cell. The device
support 4 page mode operation, Industrial temperature range
and 48 ball Chip Scale Package for user flexibility of system
design. The device also supports deep power down mode for
low standby current.
FEATURES
Process Technology: CMOS
Organization: 1M x16 bit
Power Supply Voltage: 2.7~3.1V
Three State Outputs
Compatible with Low Power SRAM
Support 4 page read mode
Package Type: 48-FBGA-6.00x7.00
PIN DESCRIPTION
1) Reserved for future use
Name
Function
Name
Function
CS1,CS2
Chip Select Inputs
Vcc
Power
OE
Output Enable Input
Vss
Ground
WE
Write Enable Input
UB
Upper Byte(I/O
9
~
16
)
A
0
~A
19
Address Inputs
LB
Lower Byte(I/O
1
~
8
)
I/O
1
~I/O
16
Data Inputs/Outputs
NC
No Connection
1)
48-FBGA: Top View(Ball Down)
LB
OE
A0
A1
A2
CS2
I/O9
UB
A3
A4
CS1
I/O1
I/O10
I/O11
A5
A6
I/O2
I/O3
Vss
I/O12
A17
A7
I/O4
Vcc
Vcc
I/O13
NC
A16
I/O5
Vss
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
NC
1
2
3
4
5
6
A
B
C
D
E
F
G
H
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice
.
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Row
select
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O
9
~I/O
16
Vcc
Vss
Precharge circuit.
Memory array
I/O Circuit
Column select
WE
OE
UB
CS1
LB
Control Logic
CS2
Row
Addresses
Column Addresses
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K1S16161CA-I | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 1Mx16 bit Uni-Transistor Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K1S16161CA-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| K1S1616B1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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