參數(shù)資料
型號: K1S3216B1C-I
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 2Mx16 bit Uni-Transistor Random Access Memory
中文描述: 2Mx16位統(tǒng)一晶體管隨機存取存儲器
文件頁數(shù): 8/10頁
文件大?。?/td> 180K
代理商: K1S3216B1C-I
Revision 0.1
June 2003
K1S3216B1C
- 8 -
U
t
RAM
Preliminary
TIMING WAVEFORM OF WRITE CYCLE(2)
(CS
1
Controlled)
Address
Data Valid
UB, LB
WE
Data in
Data out
High-Z
High-Z
t
WC
t
CW(2)
t
AW
t
BW
t
WP(1)
t
DH
t
DW
t
WR(4)
t
AS(3)
CS
1
CS
2
TIMING WAVEFORM OF WRITE CYCLE(1)
(WE Controlled)
Address
CS
1
Data Undefined
UB, LB
WE
Data in
Data out
t
WC
t
CW(2)
t
WR(4)
t
AW
t
BW
t
WP(1)
t
AS(3)
t
DH
t
DW
t
WHZ
t
OW
High-Z
High-Z
Data Valid
CS
2
相關PDF資料
PDF描述
K1S3216BCD 2Mx16 bit Page Mode Uni-Transistor Random Access Memory
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K1S64161CD-BI70000 制造商:Samsung Semiconductor 功能描述:64M 64M PSEUDO SRAM UTRAM(ASYNCH.LP X16 FBGA - Tape and Reel
K1S6416BCC 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:4Mx16 bit Page Mode Uni-Transistor Random Access Memory