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參數資料
| 型號： | K1S16161CA-I |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
| 中文描述： | 1Mx16位頁面模式統一晶體管隨機存取存儲器 |
| 文件頁數： | 7/10頁 |
| 文件大小： | 186K |
| 代理商： | K1S16161CA-I |
Revision 0.0
December 2003
K1S16161CA
- 7 -
U
t
RAM
Preliminary
Address
Data Out
Previous Data Valid
Data Valid
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
(Address Controlled
,
CS=OE=V
IL
, WE=V
IH
, UB or/and LB=V
IL
)
TIMING WAVEFORM OF READ CYCLE(2)
(WE=V
IH
)
t
AA
t
RC
t
OH
(READ CYCLE)
1.
t
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
t
HZ
(Max.) is less than
t
LZ
(Min.) both for a given device and from device to device
interconnection.
3. t
OE
(max) is met only when OE becomes enabled after t
AA
(max).
4. If invalid address signals shorter than min. t
RC
are continuously repeated for over 4us, the device needs a normal read timing(t
RC
) or
needs to sustain standby state for min. t
RC
at least once in every 4us.
Data Valid
High-Z
t
RC
t
OH
t
AA
t
CO
t
BA
t
OE
t
OLZ
t
BLZ
t
LZ
t
OHZ
t
BHZ
t
HZ
Address
UB, LB
OE
Data out
TIMING WAVEFORM OF PAGE CYCLE(READ ONLY)
Data
Valid
Data
Valid
Data
Valid
Data
Valid
Valid
Address
Valid
Address
Valid
Address
Valid
Address
Valid
Address
t
PC
t
PA
High Z
A20~A2
A1~A0
DQ15~DQ0
OE
t
OHZ
t
OE
t
CO
t
AA
CS
1
CS
2
CS
1
CS
2
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相關代理商/技術參數 |
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| K1S1616B1A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-BI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
| K1S1616B1A-FI85 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Mx16 bit Uni-Transistor Random Access Memory |
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